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| BC638 PNP Epitaxial Silicon Transistor BC638 PNP Epitaxial Silicon Transistor Switching and Amplifier Applications * Complement to BC637 1 TO-92 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings T Symbol VCER VCES VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current a = 25C unless otherwise noted Parameter Collector-Emitter Voltage at RBE=1K Value -60 -60 -60 -5 -1 -1.5 -100 1 150 -65 ~ 150 Units V V V V A A mA W C C Collector Power Dissipation Junction Temperature Storage Temperature Ta = 25C unless otherwise noted Electrical Characteristics Symbol BVCEO ICBO IEBO hFE1 hFE2 hFE3 VCE (sat) VBE (on) fT Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition IC= -10mA, IB=0 VCB= -30V, IE=0 VEB= -5V, IC=0 VCE= -2V, IC= -5mA VCE= -2V, IC= -150mA VCE= -2V, IC= -500mA IC= -500mA, IB= -50mA VCE= -2V, IC= -500mA VCE= -5V, IC= -10mA, f=50MHz Min. -60 Typ. Max. -0.1 -0.1 Units V A A 25 40 25 160 -0.5 -1 100 V V MHz Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BC638 Rev. C2 BC638 PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Device Marking BC638 BC638 BC638 BC638 Device BC638BU BC638TA BC638TF BC638TFR Package TO-92 TO-92 TO-92 TO-92 Reel Size ----- Tape Width ----- Quantity 10,000 2,000 2,000 2,000 BC638 Rev. C2 2 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic -500 Figure 2. DC Current Gain 1000 IB = - 1.8 mA IB = - 1.6 mA IC[mA], COLLECTOR CURRENT VCE = - 2V -400 IB = - 1.2 mA -300 IB = - 1.0 mA IB = - 0.8 mA hFE, DC CURRENT GAIN IB = - 1.4 mA 100 -200 IB = - 0.6 mA IB = - 0.4 mA -100 IB = - 0.2 mA -0 -0 -10 -20 -30 -40 -50 10 -1 -10 -100 -1000 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage VBE(sat), VCE(sat)[V], SATURATION VOLTAGE -10 Figure 4. Base-Emitter On Voltage -1000 IC = 10 IB -1 VBE(sat) IC[mA], COLLECTOR CURRENT VCE = - 2V -100 -0.1 -10 VCE(sat) -0.01 -1 -10 -100 -1000 -1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 IC[mA], COLLECTOR CURRENT VBE[V], BASE-EMITTER VOLTAGE Figure 5. Collector Output Capacitance 100 f=1MHz Cob[pF], CAPACITANCE 10 1 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE BC638 Rev. C2 3 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-92 4.58 -0.15 +0.25 0.46 14.47 0.40 0.10 4.58 0.20 1.27TYP [1.27 0.20] 3.60 0.20 1.27TYP [1.27 0.20] 0.38 -0.05 +0.10 3.86MAX 1.02 0.10 0.38 -0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters BC638 Rev. C2 4 www.fairchildsemi.com BC638 PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 BC638 Rev. C2 www.fairchildsemi.com |
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